Nonplanar device with thinned lower body portion and method of fabrication

ABSTRACT

A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.

This is a Divisional Application of Ser. No. 10/973,228 filed Oct. 25,2004, which is presently pending.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the field of semiconductor devices andmore particularly to a nonplanar tri-gate transistor having a thinnedlower body portion and method of fabrication.

2. Discussion of Related Art

In order to increase the performance of modern integrated circuits, suchas microprocessors, silicon on insulator (SOI) transistors have beenproposed. Silicon on insulator (SOI) transistors have an advantage inthat they can be operated in a fully depleted manner. Fully depletedtransistors have an advantage of ideal subthreshold gradients foroptimized ON current/OFF current ratios.

An example of a proposed SOI transistor which can be operated in a fullydepleted manner is a tri-gate transistor 100, such as illustrated inFIG. 1. Tri-gate transistor 100 includes a silicon body 104 formed on aninsulating substrate 102 having a buried oxide layer 103 formed on amonocrystalline silicon substrate 105. A gate dielectric layer 106 isformed on the top and sidewalls of the silicon body 104 as shown inFIG. 1. A gate electrode 108 is formed on the gate dielectric layer andsurrounds the body 104 on three sides, essentially providing atransistor 100 having three gate electrodes (G₁, G₂, G₃), one on each ofthe sidewalls of the silicon body 104 and one on the top surface of thesilicon body 104. A source region 110 and a drain region 112 are formedin the silicon body 104 on opposite sides of the gate electrode 108 asshown in FIG. 1.

An advantage of the tri-gate transistor 100 is that it exhibits goodshort channel effects (SCE). One reason tri-gate transistor 100 achievesgood short channel effects is that the nonplanarity of the device placesthe gate electrode 108 in such a way as to surround the active channelregion. That is, in the tri-gate device, the gate electrode 108 is incontact with three sides of the channel region. Unfortunately, thefourth side, the bottom part of the channel is isolated from the gateelectrode by the buried oxide layer 103 and thus is not under close gatecontrol.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustration of a nonplanar or tri-gate device.

FIGS. 2A and 2B illustrate a tri-gate or nonplanar device with a thinnedlower body portion in accordance with the present invention.

FIG. 3A illustrates a nonplanar device having multiple thinned lowerbody portions.

FIG. 3B is an illustration of a nonplanar device having a thinned lowerbody portion and including sidewall spacers, source/drain extensions andsilicided source/drain regions.

FIGS. 4A-4H illustrate a method of forming a nonplanar device with athinned lower body portion in accordance with an embodiment of thepresent invention.

DETAILED DESCRIPTION OF THE PRESENT INVENTION

The present invention is a novel nonplanar device with a thinned lowerbody portion and a method of fabrication. In the following description,numerous specific details are set forth in order to provide a thoroughunderstanding of the present invention. In other instances, well knownsemiconductor processes and manufacturing techniques have not beendescribed in particular detail in order to not unnecessarily obscure thepresent invention.

Embodiments of the present invention include a nonplanar or tri-gatetransistor having a semiconductor body which is wrapped around on threesides by a gate dielectric layer and a gate electrode. In embodiments ofthe present invention, the bottom portion of the semiconductor body ismade thinner than the top portion of the semiconductor body. Making thebottom portion of the semiconductor body thinner than the top portionincreases the gate control over the bottom portion of the body resultingin better short channel effects. In an embodiment of the presentinvention, a semiconductor film is etched into a semiconductor bodyutilizing a dry etching process which utilizes a first process gaschemistry and a first RF bias. After forming the semiconductor body, thelower portion of the body is thinned utilizing the same etch chemistryand equipment but utilizing a lower RF bias in order to inwardly taperor facet the lower body portion.

FIGS. 2A and 2B illustrate a nonplanar or tri-gate device 200 having asemiconductor body with a thinned lower body portion. FIG. 2A is anoverhead/side view of transistor 200 while FIG. 2B is an illustration ofa cross-sectional view taken through the gate electrode. Transistor 200is formed on a substrate 202 and includes a semiconductor body or fin204. A gate dielectric layer 206 is formed on the top surface 234 andsidewalls 230 and 232 of a semiconductor body 204. A gate electrode 208is formed on the gate dielectric layer 206 and surrounds thesemiconductor body or fin on three sides. A source regions 210 and adrain region 212 are formed in the semiconductor body on opposite sidesof the gate electrode 208 as shown in FIG. 2A.

As is readily apparent from FIGS. 2A and 2B, the semiconductor body 204has a bottom portion 222 which is thinner than the top portion 224. Thatis, the distance between the sidewalls 230 and 232 is greater at the topsurface 234 than at the bottom surface 236. In an embodiment of thepresent invention, sidewalls 230 and 232 of the top portion 224 aresubstantially vertical and are spaced a uniform distance apart while thesidewalls 230 and 232 of the bottom portion 222, are faceted or inwardlytapered to reduce the distance between the sidewalls 230 and 232 in thebottom portion. In an embodiment of the present invention, the distancebetween the sidewalls 230 and 232 near the bottom surface is between ½to ⅔ the distance between the sidewalls 230 and 232 near the top surface234. In an embodiment of the present invention, the sidewalls 230 and232 begin to taper inwardly at approximately the midpoint of the height238 of the semiconductor body 204 (i.e., sidewalls start taperinginwardly at the midpoint between the top surface 234 and bottom surface236). In an embodiment of the present invention, the distance betweenthe sidewalls 230 and 232 at the top surface 234 is between 20-30nanometers while the distance between the sidewalls 230 and 232 near thebottom surface 236 is between 10-15 nanometers. In an embodiment of thepresent invention, the bottom portion 222 of the semiconductor body 204is made sufficiently thin so that the gate control of the bottom portionis made similar to the gate control of the top portion. In an embodimentof the present invention, the bottom portion 222 of the semiconductorbody 204 is made sufficiently thin relative to the top portion toimprove the short channel effects of transistor 200.

Additionally, as illustrated in FIGS. 5A-5D, other semiconductor bodyprofiles or shapes may be utilized to improve the short channel effects(SCE) of the tri-gate or nonplanar transistor 200. For example, asillustrated in FIG. 5A, the semiconductor body 204 can have a pair ofsidewalls 230 and 232 which continually taper inward from the topsurface 234 to the bottom surface 236. Additionally, in an embodiment ofthe present invention, as illustrated in FIG. 5B the semiconductor body204 can have sidewalls 230 and 232 which continually taper inward fromthe top surface to the bottom surface and reach the bottom surface 236at a point or substantially at point 502. In yet another embodiment ofthe present invention as illustrated in FIG. 5C, the semiconductor body204 can have a pair of sidewalls 230 and 232 which include an uppervertical portion 510 separated by uniform distance, a middle inwardlytapered portion 512 and a lower portion 514 of vertical sidewallsseparated by a second distance which is less than the distanceseparating the top portion sidewalls 510. In yet another embodiment ofthe present invention, the semiconductor body can have an upper portion224 where the sidewalls 230 and 232 are faceted or tapered inwardly anda bottom portion 222 where the sidewalls 230 and 232 are vertical orsubstantially vertical. In each of the example illustrated in FIGS.5A-5D, the distance between the sidewalls 230 and 232 of semiconductorbody 204 on the top surface is greater than the distance between thesemiconductor body on the bottom surface. In this way, the gateelectrode 208 can have better control of the semiconductor body at thebottom surface and thereby improve the short channel effects of thedevice.

In an embodiment of the present invention, the tri-gate transistor 200is formed on an insulating substrate 202 which includes a lowermonocrystalline silicon substrate 250 upon which is formed an insulatinglayer 252, such as a silicon dioxide film. In an embodiment of thepresent invention, insulating layer 252 is a buried oxide layer of anSOI substrate. The tri-gate transistor 200, however, can be formed onany well known insulating substrate, such as substrates formed fromsilicon dioxide, nitrides, oxides, and sapphires.

Semiconductor body 204 is formed on insulating layer 252 of insulatingsubstrate 202. Semiconductor body 204 can be formed on any well knownmaterial, such as but not limited to silicon (Si), germanium (Ge),silicon germanium (Si_(x)Ge_(y)), gallium arsenide (GaAs), InSb, GaP andGaSb. Semiconductor body 204 can be formed of any well known materialwhich can be reversely altered from an insulating state to a conductivestate by applying external electrical controls. Semiconductor body 204is ideally a single crystalline film when best electrical performance oftransistor 200 is desired. For example, semiconductor body 204 is asingle crystalline film when transistor 200 is used in higherperformance applications, such as high density circuit, such as amicroprocessor. Semiconductor body 204, however, can be apolycrystalline film when transistor 200 is used in applicationsrequiring less stringent performance, such as liquid crystal displays.Insulator 252 isolate semiconductor body 204 from the monocrystallinesilicon substrate 250. In an embodiment of the present invention,semiconductor body 204 is a single crystalline silicon film.

Gate dielectric layer 206 is formed on and around three sides ofsemiconductor body 204 as shown in FIGS. 2A and 2B. Gate dielectriclayer 206 is formed on or adjacent to sidewall 230, on the top surface234 of body 204 and on or adjacent to sidewall 232 of body 204 as shownin FIGS. 2A and 2B. Gate dielectric layer 206 can be any well known gatedielectric layer. In an embodiment of the present invention, the gatedielectric layer is a silicon dioxide (SiO₂), silicon oxynitride(SiO_(x)N_(y)) or a silicon nitride (Si₃N₄) dielectric layer. In anembodiment of the present invention, the gate dielectric layer 206 is asilicon oxynitride film formed to a thickness between 5-20 Å. In anembodiment of the present invention, gate dielectric layer 206 is a highk gate dielectric layer, such as a metal oxide dielectric, such as butnot limited to tantalum pentaoxide (TaO₅), titanium oxide (TiO₂) andhafnium oxide (HfO). Gate dielectric layer 206 can be other types ofhigh k dielectric layers, such as but not limited to PZT and BST.

Gate electrode 208 is formed on and around gate dielectric layer 206 asshown in FIGS. 2A and 2B. Gate electrode 208 is formed on or adjacent togate dielectric layer 206 formed on sidewall 230 of semiconductor body204 is formed on gate dielectric layer 206 formed on the top surface 234of semiconductor body 204 and is formed adjacent to or on gatedielectric layer 206 formed on sidewall 232 of semiconductor body 204.Gate electrode 208 has a pair of laterally opposite sidewalls 260 and262 separated by a distance which defines the gate length (Lg) 264 oftransistor 200. In an embodiment of the present invention, laterallyopposite sidewalls 260 and 262 of gate electrode 208 run in a directionperpendicular to sidewalls 230 and 232 of semiconductor body 204.

Gate electrode 208 can be formed of any suitable gate electrodematerial. In an embodiment of the present invention, gate electrode 208comprises a polycrystalline silicon film doped to a concentrationdensity between 1×10¹⁹ atoms/cm³ to 1×10²⁰ atoms/cm³. In an embodimentof the present invention, the gate electrode can be a metal gateelectrode, such as but not limited to tungsten, tantalum, titanium andtheir nitrides. In an embodiment of the present invention, the gateelectrode is formed from a material having a midgap workfunction between4.5 to 4.8 eV. It is to be appreciated that gate electrode 208 need notnecessarily be a single material and can be a composite stack of thinfilms, such as but not limited to polycrystalline silicon/metalelectrode or metal/polycrystalline silicon electrode.

Transistor 200 has a source region 210 and a drain region 212. Sourceregion 210 and drain region 212 are formed in semiconductor 204 onopposite sides of gate electrode 208 as shown in FIG. 2A. Source region210 and drain region 212 are formed to an n type conductivity type whenforming a NMOS transistor and are formed to a p type conductivity whenforming a PMOS device. In an embodiment of the present invention, sourceregion 210 and drain region 212 have a doping concentration between1×10¹⁹ atoms/cm³ to 1×10²¹ atoms/cm³. Source region 210 and drain region212 can be formed of the uniform concentration or can include subregionsof different concentrations or dopant profiles, such as tip regions(e.g., source/drain extensions) and contact regions. In an embodiment ofthe present invention, when transistor 200 is a symmetrical transistor,source region 210 and drain region 212 have the same dopingconcentration and profile. In an embodiment of the present invention,when transistor 200 is formed as an asymmetrical transistor, then thedoping concentration profile of the source region 210 and drain region212 may vary in order to any particular electrical characteristics aswell known in the art. Source region 210 and drain region 212 can becollectively referred to as a pair of source/drain regions.

The portion of semiconductor body 204 located between source region 210and drain region 212, defines the channel region 270 of transistor 200.The channel region 270 can also be defined as the area of thesemiconductor body 204 surrounded by the gate electrode 208. At timeshowever, the source/drain region may extend slightly beneath the gateelectrode through, for example, diffusion to define a channel regionslightly smaller than the gate electrode length (Lg). In an embodimentof the present invention channel region 270 is intrinsic or undopedmonocrystalline silicon. In an embodiment of the present invention,channel region 270 is doped monocrystalline silicon. When channel region270 is doped it is typically doped to a conductivity level of between1×10¹⁶ to 1×10¹⁹ atoms/cm³. In an embodiment of the present invention,when the channel region is doped it is typically doped to the oppositeconductivity type of the source region 210 and the drain region 212. Forexample, when the source and drain regions are n type conductivity thechannel region would be doped to p type conductivity. Similarly, whenthe source and drain regions are p type conductivity the channel regionwould be n type conductivity. In this manner a tri-gate transistor 200can be formed into either a NMOS transistor or a PMOS transistorrespectively. Channel region 270 can be uniformly doped or can be dopednon-uniformly or with differing concentrations to provide particularelectrical and performance characteristics. For example, channel regions270 can include well-known “halo” regions, if desired.

By providing a gate dielectric and a gate electrode which surrounds thesemiconductor body on three sides, the tri-gate transistor ischaracterized in having three channels and three gates, one gate andchannel (G₁) which extends between the source and drain regions on side230 of silicon body 204, a second gate and channel (G₂) which extendsbetween the source and drain regions on the top surface of silicon body204, and a third gate and channel (G₃) which extends between the sourceand drain regions on the sidewall of silicon body 204. The gate “width”(Gw) of transistor 200 is the sum of the widths of the three channelregions. That is, the gate width of transistor 200 is equal to thelength of sidewall 230 of silicon body 204, plus the length of topsurface 234 of silicon body of 204, plus the length of sidewall 232 ofsilicon body 204. Larger “width” transistors can be obtained by usingmultiple devices coupled together (e.g., multiple silicon bodies 204surrounded by a single gate electrode 208) as illustrated in FIG. 3A.

Because the channel region 270 is surrounded on three sides by gateelectrode 208 and gate dielectric 206, transistor 200 can be operated ina fully depleted manner wherein when transistor 200 is turned “on” thechannel region 270 fully depletes thereby providing the advantageouselectrical characteristics and performance of a fully depletedtransistor. That is, when transistor 200 is turned “ON” a depletionregion is formed in channel region 270 along with an inversion layer atthe surfaces of region 270 (i.e., an inversion layer is formed on theside surfaces and top surface of the semiconductor body). The inversionlayer has the same conductivity type as the source and drain regions andforms a conductive channel between the source and drain regions to allowcurrent to flow therebetween. The depletion region depletes freecarriers from beneath the inversion layer. The depletion region extendsto the bottom of channel region 270, thus the transistor can be said tobe a “fully depleted” transistor. In embodiments of the presentinvention, the lower portion 222 of the semiconductor body 204 has beenthinned relative to the upper portion so that the gate electrode canbetter control the lower portion of the semiconductor body. By thinningthe lower portion, the two sidewall gates G₁ and G₃ can more easilydeplete free carriers from beneath the inversion layer formed on thesidewalls of the lower portion of the semiconductor body 204. Bythinning the lower portion 222 of semiconductor body 204, the two gatesG₁ and G₃ from the sidewall can control the channel region in a mannersimilar to the way the three gates G₁, G₂ and G₃ control the channel inthe upper portion 224 of the semiconductor body 204. Thinning the bottompart of the body or fin not only decreases the thickness of asemiconductor between the two gates, but also decreases the width ofthat part of the body which is in contact with the buried oxide. Theseeffects combined decrease the short channel effects in the tri-gatedevice having a thinned lower body portion.

Transistor 200 of the present invention, can be said to be an nonplanartransistor because the inversion layer of channel 270 is formed in boththe horizontal and vertical directions in semiconductor body 204. Thesemiconductor device of the present invention, can also be considered tobe a nonplanar device because the electric field from gate electrode 208is applied from both horizontal (G₂) and vertical sides (G₁ and G₃).

As stated above the gate width of transistor 200 is equal to the sum ofthe three gate widths created from semiconductor body 204 of transistor200. In order to fabricate transistors with larger gate widths,transistor 200 can include additional or multiple semiconductor bodiesor fins 204 as illustrated in FIG. 3A. Each semiconductor body or fin204 has a gate dielectric layer 206 formed on its top surface andsidewalls as shown in FIG. 3A. Gate electrode 208 is formed on andadjacent to each gate dielectric layer 206 on each semiconductor body204. Each semiconductor body 204 includes a source region 210 and drainregion 212 formed in the semiconductor body 204 on opposite sides ofgate electrode 208 as shown in FIG. 3A. In an embodiment of the presentinvention, each semiconductor body 208 is formed with same width andheight (thickness) as other semiconductor bodies 204. In an embodimentof the present invention, each source region 210 and drain region 212 ofthe semiconductor bodies 204 are electrically coupled together bysemiconductor material used to form semiconductor body 204 to form asource landing pad 310 and a drain landing pad 312 as shown in FIG. 3A.Alternatively, the source regions 210 and drain regions 212 can becoupled together by higher levels of metallization (e.g., metal 1, metal2, metal 3) used to electrically interconnect various transistors 200together in the functional circuits. The gate width of transistor 200 asshown in FIG. 3A would be equal to the sum of the gate width created byeach of the semiconductor bodies 204. In this way, a nonplanar ortri-gate transistor 200 can be formed with any gate width desired. In anembodiment of the present invention, each of the semiconductor bodies204 include a bottom portion 222 which is thinner than the top portion224 as described above.

In an embodiment of the present invention, the source 210 and drain 212can include a silicon or other semiconductor film 350 formed on andaround semiconductor body 204 as shown in FIG. 3B. For example,semiconductor film 350 can be a silicon film or silicon alloy, such assilicon germanium (Si_(x)Ge_(Y)). In an embodiment of the presentinvention, the semiconductor film 350 is a single crystalline siliconfilm formed of the same conductivity type as a source region 210 anddrain region 212. In an embodiment of the present invention, thesemiconductor film can be a silicon alloy, such as silicon germaniumwhere silicon comprises approximately 1-99 atomic percent of the alloy.The semiconductor film 350 need not necessarily be a single crystallinesemiconductor film and in embodiment can be a polycrystalline film. Inan embodiment of the present invention, semiconductor film 350 is formedon the source region 210 and the drain region 212 of semiconductor body204 to form “raised” source and drain regions. Semiconductor film 350can be electrically isolated from a gate electrode 208 by a pair ofdielectric sidewalls spacers 360, such as silicon nitride or siliconoxide or composites thereof. Sidewall spacers 360 run along laterallyopposite sidewalls 260 and 262 of gate electrode 208 as shown in FIG. 3Bthereby isolating the semiconductor film 350 from the gate electrode208. In an embodiment of the present invention, sidewall spacer 360 havea thickness of between 20-200 Å. By adding a silicon or semiconductorfilm of the source and drain regions 210 and 212 of the semiconductorbody and forming “raised” source and drain regions, the thickness of thesource and drain regions is increased thereby reducing the source/draincontact resistance to transistor 200 improving its electricalcharacteristics and performance.

In an embodiment of the present invention, a silicide film 370, such asbut not limited to titanium silicide, nickel silicide, cobalt silicideis formed on the source region 210 and drain region 212. In anembodiment of the present invention, silicide 370 is formed on siliconfilm 350 on semiconductor body 204 as shown in FIG. 3B. Silicide film370, however, can be formed directly onto silicon body 204, if desired.Dielectric spacers 360 enables silicide 370 to be formed onsemiconductor body 204 or silicon film 250 in a self-aligned process(i.e., a salicide process).

In an embodiment of the present invention, if desired, the silicon film350 and/or the silicide film 370 can also be formed on the top of gateelectrode 208 when gate electrode 208 is a silicon or silicon germaniumfilm. The formation of silicon film 350 and silicide film 370 on thegate electrode 208 reduces the contact resistance of the gate electrodethereby improving the electrical performance of transistor 200.

FIGS. 4A-4H illustrate a method of forming a nonplanar transistor havinga thinned lower body portion. The fabrication of the transistor beginswith substrate 402. A silicon or semiconductor film 408 is formed onsubstrate 402 as shown in FIG. 4A. In an embodiment of the presentinvention, the substrate 402 is an insulating substrate, such as shownin FIG. 4A. In an embodiment of the present invention, insulatingsubstrate 402 includes a lower monocrystalline silicon substrate 404 anda top insulating layer 406, such as a silicon dioxide film or siliconnitride film. Insulating layer 406 isolates semiconductor film 408 fromsubstrate 404, and in embodiment is formed to a thickness between200-2000 Å. Insulating layer 406 is sometimes referred to as a “buriedoxide” layer. When a silicon or semiconductor film 408 is formed on aninsulating substrate 402, a silicon or semiconductor on insulating (SOI)substrate is created.

Although semiconductor film 408 is ideally a silicon film, in otherembodiments it can be other types of semiconductor films, such as butnot limited to germanium (Ge), a silicon germanium alloy (Si_(x)Ge_(y)),gallium arsenide (GaAs), InSb, GaP and GaSb. In an embodiment of thepresent invention, semiconductor film 408 is an intrinsic (i.e.,undoped) silicon film. In other embodiments, semiconductor film 408 isdoped to a p type or n type conductivity with a concentration levelbetween 1×10¹⁶-1×10¹⁹ atoms/cm³. Semiconductor film 408 can be insitudoped (i.e., doped while it is deposited) or doped after it is formed onsubstrate 402 by for example ion-implantation. Doping after formationenables both PMOS and NMOS tri-gate devices to be fabricated easily onthe same insulating substrate. The doping level of the semiconductorbody at this point can be used to set the doping level of the channelregion of the device.

Semiconductor film 408 is formed to a thickness which is approximatelyequal to the height desired for the subsequently formed semiconductorbody or bodies of the fabricated tri-gate transistor. In an embodimentof the present invention, semiconductor film 408 has a thickness orheight 409 of less than 30 nanometers and ideally less than 20nanometers. In an embodiment of the present invention, semiconductorfilm 408 is formed to the thickness approximately equal to the gate“length” desired of the fabricated tri-gate transistor. In an embodimentof the present invention, semiconductor film 408 is formed thicker thandesired gate length of the device. In an embodiment of the presentinvention, semiconductor film 480 is formed to a thickness which willenable the fabricated tri-gate transistor to be operated in a fullydepleted manner for its designed gate length (Lg).

Semiconductor film 408 can be formed on insulating substrate 402 in anywell-known method. In one method of forming a silicon on insulatorsubstrate, known as the SIMOX technique, oxygen atoms are implanted at ahigh dose into a single crystalline silicon substrate and then anneal toform the buried oxide 406 within the substrate. The portion of thesingle crystalline silicon substrate above the buried oxide becomes thesilicon film 408. Another technique currently used to form SOIsubstrates is an epitaxial silicon film transfer technique which isgenerally referred to as bonded SOI. In this technique a first siliconwafer has a thin oxide grown on its surface that will later serve as theburied oxide 406 in the SOI structure. Next, a high dose hydrogenimplant is made into the first silicon wafer to form a high stressregion below the silicon surface of the first wafer. This first wafer isthen flipped over and bonded to the surface of a second silicon wafer.The first wafer is then cleaved along the high stress plain created bythe hydrogen implant. This results in a SOI structure with a thinsilicon layer on top, the buried oxide underneath all on top of thesingle crystalline silicon substrate. Well-known smoothing techniques,such as HCl smoothing or chemical mechanical polishing (CMP) can be usedto smooth the top surface of semiconductor film 408 to its desiredthickness.

At this time, if desired, isolation regions (not shown) can be formedinto SOI substrate in order to isolate the various transistors to beformed therein from one another. Isolation regions can be formed byetching away portions of the substrate film 408 surrounding a tri-gatetransistor, by for example well-known photolithographic and etchingtechniques, and then back filling the etched regions with an insulatingfilm, such as SiO₂.

In an embodiment of the present invention, a hard mask material 410formed on semiconductor film 408 as shown in FIG. 4A. Hard mask material410 is a material which can provide a hard mask for the etching of thesemiconductor film 408. A hard mask material is a material which canretain its profile during etching of the semiconductor film 408. A hardmask material 410 is a material which will not etch or only slightlyetch during the etching of semiconductor film 408. In an embodiment ofthe present invention, the hard mask material is formed of a materialsuch that the etchant used to etch the semiconductor film 408 will etchthin film 408 at least five times faster than the hard mask material andideally at least ten times faster. In an embodiment of the presentinvention, when semiconductor film 408 is a silicon film, the hard maskmaterial 410 can be a silicon nitride or silicon oxynitride film. Hardmask material 410 is formed to a thickness sufficient to retain itsprofile during the entire etch of semiconductor film 408 but not toothick to cause difficulty in its patterning. In an embodiment of thepresent invention, the hard mask material 410 is formed to a thicknessbetween 3 nanometers to 20 nanometers and ideally to a thickness lessthan 10 nanometers.

Next, as also shown in FIG. 4A, a photoresist mask 412 is formed on hardmask layer 410. Photoresist mask 412 contains a feature pattern to betransferred into the semiconductor film 408. The photoresist mask 412can be formed by any well known techniques, such as by blanketdepositing a photoresist material by masking, exposing and developingthe photoresist film into a photoresist mask 412 having a desiredpattern for the semiconductor film 408 to be patterned. Photoresist mask412 is typically formed of an organic compound. Photoresist mask 412 isformed to a thickness sufficient to retain its profile while patterningthe hard mask film 410 but yet is not formed to thick to preventlithographic patterning into the smallest dimensions (i.e., criticaldimensions) possible with photolithography system and process used.

Next, as shown in FIG. 4B, the hard mask material 410 is etched inalignment with photoresist mask 412 to form a hard mask 414 as shown inFIG. 4B. Photoresist mask 412 prevents the underlying portion of hardmask material 410 from becoming etched. In an embodiment of the presentinvention, the hard mask is etched with an etchant which can etch thehard mask material but does not etch the underlying semiconductor film208. The hard mask material is etched with an etchant that has almostperfect selectivity to the underlying semiconductor film 208. That is,in an embodiment of the present invention, the hard mask etchant etchesthe hard mask material at least one hundred times faster than theunderlying semiconductor film 208 (i.e., an etchant has a hard mask tosemiconductor film selectivity of at least 50:1). When the hard maskmaterial 414 is a silicon nitride or silicon oxynitride film, hard maskmaterial 410 can be etched into a hard mask 414 utilizing a dry etchprocess, such as a reactive ion etching/ecr plasma etching. In anembodiment of the present invention, a silicon nitride or siliconoxynitride hard mask is reactive ion etched utilizing chemistrycomprising CHF₃ and O₂ and Ar/CH₂F₂ and C₄F₈ and Ar and O₂.

Next, as shown in FIG. 4C, after hard mask film 410 has been patternedinto a hard mask 414, photoresist mask 412 can be removed by well knowntechniques. For example, photoresist mask 412 can be removed utilizing a“piranha” clean solution which includes sulfuric acid and hydrogenperoxide. Additionally, residue from photoresist mask 412 can be removedwith an O₂ ashing.

Although not required, it is desirable to remove photoresist mask 412prior to etching semiconductor film 408 so that a polymer film from thephotoresist does not form on the sidewalls of the patternedsemiconductor film 408. It is desirable to first remove the photoresistmask 412 prior to etching of the semiconductor film 408 because dryetching processes can erode the photoresist mask and cause a polymerfilm to develop on the sidewalls of the semiconductor body which can behard to remove and which can detrimentally device performance. By firstremoving the photoresist film 412 prior to patterning the semiconductorthin film 408, the semiconductor thin film 408 can be patterned andpristine sidewalls maintained.

Next, as shown in FIG. 4D, semiconductor film 408 is etched in alignmentwith hard mask 414 to form a semiconductor body 416 having a pair oflaterally opposite sidewalls 418 and 420. Hard mask 414 prevents theunderlying portion of semiconductor film 208 from becoming etched duringthe etching process. The etch is continued until the underlyinginsulating substrate is reached. In an embodiment of the presentinvention, the etch “end points” on the buried oxide layer 406.Semiconductor film 208 etched with an etchant which etches semiconductor208 without significantly etching hard mask 414. In an embodiment of thepresent invention, semiconductor film 408 is anisotropically etched sothat semiconductor body 416 has nearly vertical sidewalls 418 and 420formed in alignment with the sidewalls of hard mask 414 therebyproviding an almost perfect fidelity with hard mask 414. When hard mask414 is a silicon nitride or silicon oxynitride hard mask andsemiconductor film 408 is a silicon film, silicon film 408 can be etchedutilizing a dry etch process comprising HBr/Ar/O₂.

In an embodiment of the present invention, semiconductor body 408 isetched utilizing an electron cyclotron residence (ECR) plasma etcher. Inan embodiment of the present invention, an ECR plasma etcher using achemistry comprising HBr/O2 with a pressure between 0.2 to 0.8 pascaland the RF power of approximately 120 watts is used to etch a siliconthin film 408 into a silicon body 416. Such an etch process produces asubstantially anisotropic etch to provide substantially verticalsidewalls 418 and 420 as shown in FIG. 4D. Additionally, such an etchhas a high selectivity (approximately 20:1) to the buried oxide layer406 so that the buried oxide layer etches very little and can be used asan etch stop and for end point detection. The ability to end pointdetect is important to insure that all of the semiconductor film clearsfrom the buried oxide layer because the thickness 409 of the thin filmacross the wafer may vary and the etch rate of different widthsemiconductor bodies may also vary. In an embodiment of the presentinvention, an RF bias of between 100-120 watts is used. The RF biascontrols the electron energy in the etch which in turn controls theanisotropic profile of the etch.

Next, as shown in FIG. 4F, the semiconductor body 416 is etched so asthe reduce the distance between the sidewalls 418 and 420 in the lowerportion of the semiconductor body 416. The etching of a semiconductorbody to thin the lower portion of the semiconductor body can be referredto as the “profile” etch. In an embodiment of the present invention, theprofile etch is utilized to inwardly taper or form facets 422 and 424 onthe sidewalls 418 and 420 as illustrated in FIG. 4E. It is to beappreciated that in other embodiments of the present invention, theprofile etch can thin the lower body portion as illustrated in FIGS.5A-5D. In an embodiment of the present invention, a plasma etch processwhich produces an isotropic etch is utilized to reduce the distancebetween the sidewalls in lower portion of the semiconductor body ascompared to the upper portion of the semiconductor body. In anembodiment of the present invention, the same plasma etch equipment andetch chemistry is used during the profile etch as is used during thepatterning of the semiconductor film 408 except that the RF bias isdecreased so that the vertical directionality of the ions is reduced. Inan embodiment of the present invention, when semiconductor body 416 is asilicon body, the profile etch can be accomplished utilizing an ECRplasma etcher with a chemistry comprising HBr/O2 and a pressure between0.2 to 0.8 pascal with an RF bias between 50-70 watts.

Next, as also shown in FIG. 4F, the hard mask 414 is removed fromsemiconductor body 416 having a thinned lower body portion. In anembodiment of the present invention, when hard mask 414 is a siliconnitride or silicon oxynitride film, a wet chemistry comprisingphosphoric acid and Di water can be used to remove the hard mask. In anembodiment of the present invention, the hard mask etch comprisesbetween 80-90% phosphoric acid (by volume) and Di water heated to atemperature between 150-170° C. and ideally to 160° C. is used. Such anetchant will have an almost perfect selectivity between the siliconnitride hard mask 214 and buried oxide layer 406.

Next, if desired, after removing hard mask 414 as illustrated in FIG.4F, semiconductor body 416 can be exposed to a wet etchant to clean thebody 416. In an embodiment of the present invention, a silicon body 416is exposed to a wet etchant comprising ammonia hydroxide (NH₄OH) toremove any line edge roughness or pitting which may have developedduring the patterning of the silicon body 416. In an embodiment of thepresent invention, a silicon body 416 is exposed for a period of time ofbetween 30 seconds to 2 minutes to an etchant comprising between 0.1-1%of ammonia hydroxide by volume at a temperature between 20-30 degreesCelsius in order to provide a semiconductor body 416 with pristinesidewalls 418 and 420.

Next, as illustrated in FIG. 4G, a gate dielectric layer 430 is formedon sidewalls 418 and 420 and the top surface of semiconductor body 416.The gate dielectric layer can be a deposited dielectric or a growndielectric. In an embodiment of the present invention, the gatedielectric layer 426 is a silicon oxynitride dielectric film grown by adry/wet oxidation process. In an embodiment of the present invention,the silicon oxide film is grown to a thickness between 5-15 Å. In anembodiment of the present invention, the gate dielectric layer 430 is adeposited dielectric, such as but not limited to a high dielectricconstant film, such as a metal oxide dielectric, such as tantalumpentaoxide (Ta₂O₅), titanium oxide (TiO₂), hafnium oxide, zirconiumoxide, and aluminum oxide. Additionally, in an embodiment of the presentinvention, gate dielectric layer 430 can be other high k dielectricfilms, such as but limited to PZT and BST. Any well known technique canbe utilized to deposit a high k dielectric, such as but not limited tochemical vapor deposition, atomic layer deposition and sputtering.

Next, gate electrode 432 is formed on the gate dielectric layer 430formed on the top surface of semiconductor body 416 and is formed on oradjacent to the gate dielectric layer 430 formed on or adjacent tosidewalls 418 and 420 as shown in FIG. 4G. The gate electrode 432 has atop surface opposite a bottom surface formed on insulating layer 406 andhas a pair of laterally opposite sidewalls 434 and 436 which define thegate length of the device. Gate electrode 432 can be formed by blanketdepositing a suitable gate electrode material over the substrate andthen patterning the gate electrode material with well knownphotolithograph and etching techniques to form a gate electrode 432 fromthe gate electrode material. In an embodiment of the present invention,the gate electrode material comprises polycrystalline silicon. Inanother embodiment of the present invention, the gate electrode materialcomprises a polycrystalline silicon germanium alloy. In yet otherembodiments of the present invention, the gate electrode material cancomprise a metal film, such as but not limited to tungsten, tantalum andtheir nitrides. In an embodiment of the present invention, thephotolithography process used to find the gate electrode 432 utilizesthe minimum or smallest dimension lithography process used to fabricatethe nonplanar transistor (that is, in an embodiment of the presentinvention, the gate length (Lg) of the gate electrode 432 has a minimumfeature dimension of the transistor defined by photolithography). In anembodiment of the present invention, the gate length is less than orequal to 30 nanometers and ideally less than 20 nanometers. It is to beappreciated that although the gate dielectric layer and gate electrode,as illustrated in FIGS. 4G and 4H, are formed with a “subtractive”process whereby undesired portions are etched away, the gate electrodecan be formed with a replacement gate process whereby a sacrificial gateelectrode is first formed, an interlayer dielectric formed adjacentthereto, the sacrificial gate electrode then removed to form an openingin which the gate electrode is then formed as is well known in the art.

Next, as shown in FIG. 4H, a source region 440 and a drain region 442are then formed in the semiconductor body 416 on opposite sides of gateelectrode 432. For a PMOS transistor, the semiconductor body are dopedto a p type conductivity with a concentration between 1×10²⁰ to 1×10²¹atoms/cm³. For an NMOS nonplanar transistor, the semiconductor body 416is doped with n type conductivity to a concentration between 1×10²⁰ to1×10²¹ atmos/cm³ to form the source/drain regions. In an embodiment ofthe present invention, the source/drain regions can be formed by ionimplantation. In an embodiment of the present invention, the ionimplantation occurs in a vertical direction (i.e., a directionperpendicular to the substrate) as shown in FIG. 4H. The gate electrode432 is a polysilicon gate electrode and can be doped during the ionimplantation process. The gate electrode 432 acts as a mask to preventthe ion implantation step from doping the channel region of thenonplanar transistor. Again, the channel region is a portion of thesemiconductor body 416 located beneath or surrounded by the gateelectrode 432. If the gate electrode 432 is a metal electrode adielectric hard mask can be used to block the doping during ionimplantation process. In other embodiments or other methods, such assolid source diffusion may be used to dope the semiconductor body toform the source and drain regions. In embodiments of the presentinvention, the source/drain regions may also include subregions, such assource/drain extensions and source/drain contact regions. In such acase, the semiconductor body 416 would be doped on either side of thegate electrode 432 to form the source/drain extensions and then a pairof sidewall spacers such as illustrated in FIG. 3B would be formed alongthe sidewalls of the gate electrode and a second doping step utilized toform heavily doped source/drain contact region as is well known in theart. Additionally, if desired at this time, additional silicon and/orsilicide can be formed onto the semiconductor bodies 416 to form raisedsource/drain regions and reduce the contact resistance of the device.This completes the fabrication of a nonplanar device having asemiconductor body with a thinned lower portion to improve deviceperformance.

1-10. (canceled)
 11. A method of forming a device comprising: forming asemiconductor body on an insulating layer of a substrate, saidsemiconductor body having a top surface opposite a bottom surface formedon said insulating layer and a pair of laterally opposite sidewallswherein the distance between said laterally opposite sidewalls is lessat the bottom surface of said semiconductor body than at the top surfaceof said semiconductor body; forming a gate dielectric layer on said topsurface of said semiconductor body and on said sidewalls of saidsemiconductor body; forming a gate electrode on said gate dielectriclayer on said top surface of said semiconductor body and adjacent tosaid gate dielectric layer on said sidewalls of said semiconductor body;and forming a pair of source/drain regions in said semiconductor body onopposite sides of said gate electrode.
 12. The method of claim 11wherein the width at the bottom of said semiconductor body isapproximately ½ to ⅔ of the width at the top of said semiconductor body.13. The method of claim 11 wherein said distance between said sidewallsis uniform at the top portion of said semiconductor body and becomesincreasingly smaller near the bottom portion of said semiconductor body.14. The method of claim 11 wherein the distance between said sidewallsof said semiconductor body at the top surface is between 20-30 nm andwherein the distance between said laterally opposite sidewalls near thebottom is between 10-15 nm.
 15. A method of forming a transistorcomprising: providing a substrate having an oxide insulating layerformed thereon and a semiconductor thin film formed on the oxideinsulating layer; etching said semiconductor film to form asemiconductor body having a top surface opposite a bottom surface onsaid oxide insulating film and a pair laterally opposite sidewalls;etching said semiconductor body to reduce the distance between laterallyopposite sidewalls near the bottom of said semiconductor body relativeto the top of said semiconductor body; forming a gate dielectric layeron the top surface and sidewalls of said semiconductor body; forming agate electrode on said gate dielectric layer on the top of saidsemiconductor body and adjacent to the gate dielectric layer on thesidewalls of said semiconductor body; and forming a pair of source/drainregions in said semiconductor body on opposite sides of said gateelectrode.
 16. The method of claim 15 wherein said etching of saidsemiconductor film stops on said oxide insulating layer.
 17. The methodof claim 15 wherein said semiconductor body comprises silicon andwherein said etching of said semiconductor film is a dry etching processwhich utilizes a chemistry comprising HBr/O2.
 18. The method of claim 15wherein the etching of said semiconductor body reduces the distancebetween the laterally opposite sidewalls near the bottom portion of saidsemiconductor body without significantly etching the top portion of saidsemiconductor body.
 19. The method of claim 18 wherein saidsemiconductor body is silicon and is etched by a dry etching processutilizing a chemistry comprising HBr/O₂.
 20. The method of claim 18wherein the power utilized during said etching of said semiconductorbody to reduce the thickness of the bottom portion utilizes an RF biasbetween 50-70 watts.
 21. The method of claim 18 wherein the etchingprocess utilized to reduce the distance between the sidewalls on thebottom portion of said semiconductor body utilizes a total HBr/O₂ gasflow between 150-180 mL/min.
 22. The method of claim 15 furthercomprising after etching said semiconductor body to reduce the distancebetween laterally opposite sidewalls of said semiconductor body near thebottom portion, exposing said semiconductor body to a wet chemistrycomprising NHyOH.
 23. The method claim 15 wherein said etching of saidsemiconductor film to form said body utilizes a first process gaschemistry and a first RF bias and said etching of said semiconductorbody to reduce the thickness of said bottom portion utilizes a secondprocess gas and a second RF bias wherein said second RF bias is lessthan said first RF bias.
 24. The method of claim 23 wherein said firstprocess gas is the same as said second process gas.
 25. The method ofclaim 24 wherein said first and second process gas comprises HBr/Ar/O₂.